Report writer needed for the topic Silicon Germanium HBT

Bipolar transistors came into invention at Bell Laboratories in USA, in the year 1948 [1]. Initially the transistor was a contact device made of germanium, but then Shockley presented a study on PN junctions plus junction transistors in 1949 [2]. An expansive number of developments and leaps forward were required to change over the first idea into a useful innovation for manufacturing VLSI circuits. In these, diffusion was important advance, since it allowed bases and emitters fabrication by impurity diffusion in vapour phase [3]. The utilization of epitaxy [4] for producing a thin crystal layer over a highly doped layer was a great step to move ahead, and become

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